Analysis of Frequency and Voltage Dependent Electrical Features of Au/Si3N4/p-GaAs (MIS) Device at Room Temperature

Raziye Ertuğrul Uyar

Article Details

Analysis of Frequency and Voltage Dependent Electrical Features of Au/Si3N4/p-GaAs (MIS) Device at Room Temperature

Authors:

Raziye Ertuğrul Uyar

Publisher:

Gazi University

Main Topics:

Electronic and Magnetic Properties of Condensed Matter; Superconductivity

Journal:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.11 Issue 2, pp.372-378

Document Type:

Article

Publication Date:

6/2024

Document Language:

English

Document ID (Org No.):

2001318120

pISSN:

2147-9542

Keywords:

Abstract:

 The investigation presented here deals with the comprehensive analysis of the C-V-f and Gω-V-f characteristics of the AuSi3N4p-GaAs MIS device. These measurements were performed at 300 K and covered a frequency of between 10 kHz1 MHz. The determination of the Rs was facilitated by the use of the conductance method, while the evaluation of the Nss of the MIS device was performed according to the Hill-Coleman method. A noteworthy observation concerns the significant frequency dispersion observed in the C-V-f and Gω-V-f features of the MIS devices, particularly noticeable at low frequencies, which is attributable to the influence of Rs and Nss. Furthermore, the determination of the high-frequency Cm and Gmω involved measurements under both reverse and forward-biased conditions, followed by careful adjustments to mitigate the effects of Rs. This meticulous procedure culminated in the derivation of the true capacitance values inherent in semiconductor structure.

 The investigation presented here deals with the comprehensive analysis of the C-V-f and Gω-V-f characteristics of the AuSi3N4p-GaAs MIS device. These measurements were performed at 300 K and covered a frequency of between 10 kHz1 MHz. The determination of the Rs was facilitated by the use of the conductance method, while the evaluation of the Nss of the MIS device was performed according to the Hill-Coleman method. A noteworthy observation concerns the significant frequency dispersion observed in the C-V-f and Gω-V-f features of the MIS devices, particularly noticeable at low frequencies, which is attributable to the influence of Rs and Nss. Furthermore, the determination of the high-frequency Cm and Gmω involved measurements under both reverse and forward-biased conditions, followed by careful adjustments to mitigate the effects of Rs. This meticulous procedure culminated in the derivation of the true capacitance values inherent in semiconductor structure.

 The investigation presented here deals with the comprehensive analysis of the C-V-f and Gω-V-f characteristics of the AuSi3N4p-GaAs MIS device. These measurements were performed at 300 K and covered a frequency of between 10 kHz1 MHz. The determination of the Rs was facilitated by the use of the conductance method, while the evaluation of the Nss of the MIS device was performed according to the Hill-Coleman method. A noteworthy observation concerns the significant frequency dispersion observed in the C-V-f and Gω-V-f features of the MIS devices, particularly noticeable at low frequencies, which is attributable to the influence of Rs and Nss. Furthermore, the determination of the high-frequency Cm and Gmω involved measurements under both reverse and forward-biased conditions, followed by careful adjustments to mitigate the effects of Rs. This meticulous procedure culminated in the derivation of the true capacitance values inherent in semiconductor structure.

 The investigation presented here deals with the comprehensive analysis of the C-V-f and Gω-V-f characteristics of the AuSi3N4p-GaAs MIS device. These measurements were performed at 300 K and covered a frequency of between 10 kHz1 MHz. The determination of the Rs was facilitated by the use of the conductance method, while the evaluation of the Nss of the MIS device was performed according to the Hill-Coleman method. A noteworthy observation concerns the significant frequency dispersion observed in the C-V-f and Gω-V-f features of the MIS devices, particularly noticeable at low frequencies, which is attributable to the influence of Rs and Nss. Furthermore, the determination of the high-frequency Cm and Gmω involved measurements under both reverse and forward-biased conditions, followed by careful adjustments to mitigate the effects of Rs. This meticulous procedure culminated in the derivation of the true capacitance values inherent in semiconductor structure.

Article Details

Analysis of Frequency and Voltage Dependent Electrical Features of Au/Si3N4/p-GaAs (MIS) Device at Room Temperature

Authors:

Raziye Ertuğrul Uyar

Publisher:

Gazi University

Main Topics:

Electronic and Magnetic Properties of Condensed Matter; Superconductivity

Journal:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.11 Issue 2, pp.372-378

Document Type:

Article

Publication Date:

6/2024

Document Language:

English

Document ID (Org No.):

2001318120

pISSN:

2147-9542

Silicon Nitride (Si3N4)

MIS Device

Capacitance

Conductance

Series Resistance

Interface States

Issues

Article Details

Analysis of Frequency and Voltage Dependent Electrical Features of Au/Si3N4/p-GaAs (MIS) Device at Room Temperature

Authors: Raziye Ertuğrul Uyar

Publisher: Gazi University

Main Topics: Electronic and Magnetic Properties of Condensed Matter; Superconductivity

Journal: Gazi University Journal of Science Part A: Engineering and Innovation Vol.11 Issue 2, pp.372-378

Document Type: Article

Publication Date: 6/2024

Document Language: English

Document ID (Org No.): 2001318120

pISSN: 2147-9542

Silicon Nitride (Si3N4)

MIS Device

Capacitance

Conductance

Series Resistance

Interface States

Issues

Authors:

Raziye Ertuğrul Uyar

Publisher:

Gazi University

Main Topics:

Electronic and Magnetic Properties of Condensed Matter; Superconductivity

Journal:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.11 Issue 2, pp.372-378

Document Type:

Article

Publication Date:

6/2024

Document Language:

English

Document ID (Org No.):

2001318120

pISSN:

2147-9542