Electrical characteristics of Au/Ti/HfO2/n-GaAs  metal-insulator-semiconductor structures with high-k interfacial layer

Abdulkerim KARABULUT; İkram ORAK; Abdülmecit TÜRÜT

doi:https://doi.org/10.32571/ijct.456902

Article Details

Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Authors:

Abdulkerim KARABULUT | İkram ORAK | Abdülmecit TÜRÜT

Publisher:

İbrahim DEMİRTAŞ

Main Topics:

Applied physics

Journal:

International Journal of Chemistry and Technology 2018 Vol.2 Issue 2, pp.116-122

Document Type:

Article

Publication Date:

12/2018

Document Language:

English

Document ID (Org No.):

2000476866

Frequency:

Bi-Annual

eISSN:

2602-277X

DOI:

https://doi.org/10.32571/ijct.456902

Abstract:

 


We have fabricated,
metal-insulator-semiconductor (MIS) structures, the Au/Ti/HfO2/n-GaAs. Metal rectifying contacts were
made by dc magnetron sputtering technique, and hafnium
dioxide (HfO2) interfacial
insulating layer with 3, 5 and 10 nm thickness has been formed by the atomic
layer depositon (ALD) technique.
The series resistance value from the forward bias current-voltage (I-V) curves of 3 nm and 5 nm MIS structures very slightly has reduced
with a decrease in the measurement temperature. The barrier height value from I-V characteristics increased with increasing HfO2 layer thickness. The
barrier increment in the rectifying contacts is very important for an adequate
barrier height in FET operation and is useful for the gates of the metal-semiconductor
field-effect transistors
or also show promise as small signal zero-bias rectifiers and microwave mixers.

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Article Details

Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer

Authors: Abdulkerim KARABULUT | İkram ORAK | Abdülmecit TÜRÜT

Publisher: İbrahim DEMİRTAŞ

Main Topics: Applied physics

Journal: International Journal of Chemistry and Technology 2018 Vol.2 Issue 2, pp.116-122

Document Type: Article

Publication Date: 12/2018

Document Language: English

Document ID (Org No.): 2000476866

Frequency: Bi-Annual

eISSN: 2602-277X

DOI: https://doi.org/10.32571/ijct.456902

Issues

Authors:

Abdulkerim KARABULUT | İkram ORAK | Abdülmecit TÜRÜT

Publisher:

İbrahim DEMİRTAŞ

Main Topics:

Applied physics

Journal:

International Journal of Chemistry and Technology 2018 Vol.2 Issue 2, pp.116-122

Document Type:

Article

Publication Date:

12/2018

Document Language:

English

Document ID (Org No.):

2000476866

Frequency:

Bi-Annual

eISSN:

2602-277X

DOI:

https://doi.org/10.32571/ijct.456902