Modulation Frequency-Dependence of Photocurrent in Amorphous Si:H p-i-n and Chalcogenides

Bengü KAPLAN; Ruhi KAPLAN

Article Details

Modulation Frequency-Dependence of Photocurrent in Amorphous Si:H p-i-n and Chalcogenides

Authors:

Bengü KAPLAN | Ruhi KAPLAN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2002 Vol.26 Issue 5, pp.355-362

Document Type:

Article

Publication Date:

4/2002

Document Language:

Turkish

Document ID (Org No.):

2000762089

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101

Keywords:

Abstract:

 

The effects of modulation frequencies (up to 35 kHz) on the intensity- and temperature-dependence of photocurrent of amorphous (a-) Si:H p-i-n  and chalcogenide glasses (a-Se and  a-As2Se3) were  investigated in detail.  The variation of exponent n, and in the  power-law relationship sph or Iph \propto Gn   between the photoconductivity (or photocurrent) and the generation  flux, with modulation frequency in chalcogenide glasses is found to be  much stronger than that of a-Si:H p-i-n.  The activation energies,  calculated from the temperature-dependent photocurrent, were determined  at different modulation frequencies.  We conclude that the activation  energy increases with incresing modulation frequencies at low  excitation intensities.  The results are also compared with the  predictions of multiple-trapping (MT) and distant-pair (DP) models  developed for photoconductivity of a-semiconductors at high and low  temperatures, respectively.

 

The effects of modulation frequencies (up to 35 kHz) on the intensity- and temperature-dependence of photocurrent of amorphous (a-) Si:H p-i-n  and chalcogenide glasses (a-Se and  a-As2Se3) were  investigated in detail.  The variation of exponent n, and in the  power-law relationship sph or Iph \propto Gn   between the photoconductivity (or photocurrent) and the generation  flux, with modulation frequency in chalcogenide glasses is found to be  much stronger than that of a-Si:H p-i-n.  The activation energies,  calculated from the temperature-dependent photocurrent, were determined  at different modulation frequencies.  We conclude that the activation  energy increases with incresing modulation frequencies at low  excitation intensities.  The results are also compared with the  predictions of multiple-trapping (MT) and distant-pair (DP) models  developed for photoconductivity of a-semiconductors at high and low  temperatures, respectively.

Article Details

Modulation Frequency-Dependence of Photocurrent in Amorphous Si:H p-i-n and Chalcogenides

Authors:

Bengü KAPLAN | Ruhi KAPLAN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2002 Vol.26 Issue 5, pp.355-362

Document Type:

Article

Publication Date:

4/2002

Document Language:

Turkish

Document ID (Org No.):

2000762089

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101

Turk. J. Phys.

26

(2002)

355-362. Full text: pdf Other articles published in the same issue: Turk. J. Phys.

vol.26

iss.5.

Issues

Article Details

Modulation Frequency-Dependence of Photocurrent in Amorphous Si:H p-i-n and Chalcogenides

Authors: Bengü KAPLAN | Ruhi KAPLAN

Publisher: TUBITAK

Journal: Turkish Journal of Physics 2002 Vol.26 Issue 5, pp.355-362

Document Type: Article

Publication Date: 4/2002

Document Language: Turkish

Document ID (Org No.): 2000762089

Frequency: Bimonthly

eISSN: 1303-6122

pISSN: 1300-0101

Turk. J. Phys.

26

(2002)

355-362. Full text: pdf Other articles published in the same issue: Turk. J. Phys.

vol.26

iss.5.

Issues

Authors:

Bengü KAPLAN | Ruhi KAPLAN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2002 Vol.26 Issue 5, pp.355-362

Document Type:

Article

Publication Date:

4/2002

Document Language:

Turkish

Document ID (Org No.):

2000762089

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101