Grown Silicon Iron Oxide by DC- RF Magnetron Co-Sputtering Technique

Erdal Turgut

Article Details

Grown Silicon Iron Oxide by DC- RF Magnetron Co-Sputtering Technique

Authors:

Erdal Turgut

Publisher:

Recep Tayyip Erdoğan University

Main Topics:

Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik

Journal:

Recep Tayyip Erdoğan Üniversitesi Fen ve Mühendislik Bilimleri Dergisi Vol.5 Issue 1, pp.133-140

Document Type:

Article

Publication Date:

6/2024

Document Language:

Turkish

Document ID (Org No.):

2001321810

pISSN:

2687-2315

Keywords:

Abstract:

 In this study, the structure of silicon iron oxide Si:Fe2O3 was grown using co-sputtering. The Si:Fe2O3 film was grown on glass substrates at a pressure of 8.5 mTorr and a temperature of 450C for 35 minutes. Optical measurements have revealed that the band gap of the structure ranges from 2.54 to 2.73 eV. The roughness values of the films in AFM images are Ra 3.08 nm and Sa 2.7 nm for Si:Fe2O3, and Ra 1.88 nm and Sa 2.09 nm for Fe2O3, respectively. As can be seen from the XPS figures, the change in binding energy is attributed to electron exchange among silicon, iron, and oxygen. In the iron-silicon oxide structure, the energy increases slightly as a result of the chemical environment. XRD measurements indicate that the size of crystal grains decreases gradually with an increase in silicon content. The Si4 ion has a strong tendency to distribute itself within the tetrahedral region of spinel-like structures. The behavior of the structure is influenced by the stoichiometry of oxygen. The consistent results from both XRD and SEM images indicate that the crystal grain sizes gradually decrease as the silicon content increases.

 In this study, the structure of silicon iron oxide Si:Fe2O3 was grown using co-sputtering. The Si:Fe2O3 film was grown on glass substrates at a pressure of 8.5 mTorr and a temperature of 450C for 35 minutes. Optical measurements have revealed that the band gap of the structure ranges from 2.54 to 2.73 eV. The roughness values of the films in AFM images are Ra 3.08 nm and Sa 2.7 nm for Si:Fe2O3, and Ra 1.88 nm and Sa 2.09 nm for Fe2O3, respectively. As can be seen from the XPS figures, the change in binding energy is attributed to electron exchange among silicon, iron, and oxygen. In the iron-silicon oxide structure, the energy increases slightly as a result of the chemical environment. XRD measurements indicate that the size of crystal grains decreases gradually with an increase in silicon content. The Si4 ion has a strong tendency to distribute itself within the tetrahedral region of spinel-like structures. The behavior of the structure is influenced by the stoichiometry of oxygen. The consistent results from both XRD and SEM images indicate that the crystal grain sizes gradually decrease as the silicon content increases.

 In this study, the structure of silicon iron oxide Si:Fe2O3 was grown using co-sputtering. The Si:Fe2O3 film was grown on glass substrates at a pressure of 8.5 mTorr and a temperature of 450C for 35 minutes. Optical measurements have revealed that the band gap of the structure ranges from 2.54 to 2.73 eV. The roughness values of the films in AFM images are Ra 3.08 nm and Sa 2.7 nm for Si:Fe2O3, and Ra 1.88 nm and Sa 2.09 nm for Fe2O3, respectively. As can be seen from the XPS figures, the change in binding energy is attributed to electron exchange among silicon, iron, and oxygen. In the iron-silicon oxide structure, the energy increases slightly as a result of the chemical environment. XRD measurements indicate that the size of crystal grains decreases gradually with an increase in silicon content. The Si4 ion has a strong tendency to distribute itself within the tetrahedral region of spinel-like structures. The behavior of the structure is influenced by the stoichiometry of oxygen. The consistent results from both XRD and SEM images indicate that the crystal grain sizes gradually decrease as the silicon content increases.

 In this study, the structure of silicon iron oxide Si:Fe2O3 was grown using co-sputtering. The Si:Fe2O3 film was grown on glass substrates at a pressure of 8.5 mTorr and a temperature of 450C for 35 minutes. Optical measurements have revealed that the band gap of the structure ranges from 2.54 to 2.73 eV. The roughness values of the films in AFM images are Ra 3.08 nm and Sa 2.7 nm for Si:Fe2O3, and Ra 1.88 nm and Sa 2.09 nm for Fe2O3, respectively. As can be seen from the XPS figures, the change in binding energy is attributed to electron exchange among silicon, iron, and oxygen. In the iron-silicon oxide structure, the energy increases slightly as a result of the chemical environment. XRD measurements indicate that the size of crystal grains decreases gradually with an increase in silicon content. The Si4 ion has a strong tendency to distribute itself within the tetrahedral region of spinel-like structures. The behavior of the structure is influenced by the stoichiometry of oxygen. The consistent results from both XRD and SEM images indicate that the crystal grain sizes gradually decrease as the silicon content increases.

Article Details

Grown Silicon Iron Oxide by DC- RF Magnetron Co-Sputtering Technique

Authors:

Erdal Turgut

Publisher:

Recep Tayyip Erdoğan University

Main Topics:

Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik

Journal:

Recep Tayyip Erdoğan Üniversitesi Fen ve Mühendislik Bilimleri Dergisi Vol.5 Issue 1, pp.133-140

Document Type:

Article

Publication Date:

6/2024

Document Language:

Turkish

Document ID (Org No.):

2001321810

pISSN:

2687-2315

Silicon iron oxide

Co-sputtering

Spinel-like structures

Issues

Article Details

Grown Silicon Iron Oxide by DC- RF Magnetron Co-Sputtering Technique

Authors: Erdal Turgut

Publisher: Recep Tayyip Erdoğan University

Main Topics: Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik

Journal: Recep Tayyip Erdoğan Üniversitesi Fen ve Mühendislik Bilimleri Dergisi Vol.5 Issue 1, pp.133-140

Document Type: Article

Publication Date: 6/2024

Document Language: Turkish

Document ID (Org No.): 2001321810

pISSN: 2687-2315

Silicon iron oxide

Co-sputtering

Spinel-like structures

Issues

Authors:

Erdal Turgut

Publisher:

Recep Tayyip Erdoğan University

Main Topics:

Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik

Journal:

Recep Tayyip Erdoğan Üniversitesi Fen ve Mühendislik Bilimleri Dergisi Vol.5 Issue 1, pp.133-140

Document Type:

Article

Publication Date:

6/2024

Document Language:

Turkish

Document ID (Org No.):

2001321810

pISSN:

2687-2315