A Study on the Wide Frequency Range Electrical Variables in the Al/Coumarin–PVA/p-Si Diodes at Room Temperature

Selçuk Demirezen

Article Details

A Study on the Wide Frequency Range Electrical Variables in the Al/Coumarin–PVA/p-Si Diodes at Room Temperature

Authors:

Selçuk Demirezen

Publisher:

Gazi University

Journal:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 1, pp.53-61

Document Type:

Article

Publication Date:

3/2023

Document Language:

English

Document ID (Org No.):

2001286703

pISSN:

2147-9542

Keywords:

Abstract:

 Coumarin-PVA is deposited onto p-Si wafers using the spin coating technique. I examined the fundamental electrical variables of the AlCoumarinPVAp-Si type Schottky barrier diodes SBDs, by utilizing capacitancevoltageC-V and conductancevoltage G-V measurements at different frequencies varied from 10kHz to1MHz. I have thoroughly explored how the CoumarinPVA interlayer, series resistance Rs and surface states Nss affect the electrical properties of SBDs. In order to remove Rss influence on the observed C and G values, I corrected them. The observed high values of CG measured at low frequencies result from the existence of interfacial states. There is evidence that while NA decreases exponentially with increasing frequency, B increases exponentially. A particular distribution of Nss density, polarization processes, and the existence of an interfacial layer can all contribute to explaining these characteristic features of them. According to experimental findings, I conclude that the interfacial polymer CoumarinPVA layer as well as the Nss and Rs also have a significant impact on the CG-V quantities of SBDs.

 Coumarin-PVA is deposited onto p-Si wafers using the spin coating technique. I examined the fundamental electrical variables of the AlCoumarinPVAp-Si type Schottky barrier diodes SBDs, by utilizing capacitancevoltageC-V and conductancevoltage G-V measurements at different frequencies varied from 10kHz to1MHz. I have thoroughly explored how the CoumarinPVA interlayer, series resistance Rs and surface states Nss affect the electrical properties of SBDs. In order to remove Rss influence on the observed C and G values, I corrected them. The observed high values of CG measured at low frequencies result from the existence of interfacial states. There is evidence that while NA decreases exponentially with increasing frequency, B increases exponentially. A particular distribution of Nss density, polarization processes, and the existence of an interfacial layer can all contribute to explaining these characteristic features of them. According to experimental findings, I conclude that the interfacial polymer CoumarinPVA layer as well as the Nss and Rs also have a significant impact on the CG-V quantities of SBDs.

 Coumarin-PVA is deposited onto p-Si wafers using the spin coating technique. I examined the fundamental electrical variables of the AlCoumarinPVAp-Si type Schottky barrier diodes SBDs, by utilizing capacitancevoltageC-V and conductancevoltage G-V measurements at different frequencies varied from 10kHz to1MHz. I have thoroughly explored how the CoumarinPVA interlayer, series resistance Rs and surface states Nss affect the electrical properties of SBDs. In order to remove Rss influence on the observed C and G values, I corrected them. The observed high values of CG measured at low frequencies result from the existence of interfacial states. There is evidence that while NA decreases exponentially with increasing frequency, B increases exponentially. A particular distribution of Nss density, polarization processes, and the existence of an interfacial layer can all contribute to explaining these characteristic features of them. According to experimental findings, I conclude that the interfacial polymer CoumarinPVA layer as well as the Nss and Rs also have a significant impact on the CG-V quantities of SBDs.

 Coumarin-PVA is deposited onto p-Si wafers using the spin coating technique. I examined the fundamental electrical variables of the AlCoumarinPVAp-Si type Schottky barrier diodes SBDs, by utilizing capacitancevoltageC-V and conductancevoltage G-V measurements at different frequencies varied from 10kHz to1MHz. I have thoroughly explored how the CoumarinPVA interlayer, series resistance Rs and surface states Nss affect the electrical properties of SBDs. In order to remove Rss influence on the observed C and G values, I corrected them. The observed high values of CG measured at low frequencies result from the existence of interfacial states. There is evidence that while NA decreases exponentially with increasing frequency, B increases exponentially. A particular distribution of Nss density, polarization processes, and the existence of an interfacial layer can all contribute to explaining these characteristic features of them. According to experimental findings, I conclude that the interfacial polymer CoumarinPVA layer as well as the Nss and Rs also have a significant impact on the CG-V quantities of SBDs.

Article Details

A Study on the Wide Frequency Range Electrical Variables in the Al/Coumarin–PVA/p-Si Diodes at Room Temperature

Authors:

Selçuk Demirezen

Publisher:

Gazi University

Journal:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 1, pp.53-61

Document Type:

Article

Publication Date:

3/2023

Document Language:

English

Document ID (Org No.):

2001286703

pISSN:

2147-9542

Coumarin-PVA Interlayer

Surface States

Frequency and Voltage Dependency

Series Resistance

Coumarin-PVA interlayer Surface states Frequency and voltage dependency Series resistance

Coumarin-PVA interlayer

Surface states

Frequency and voltage dependency

Series resistance

Issues

Article Details

Authors: Selçuk Demirezen

Publisher: Gazi University

Journal: Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 1, pp.53-61

Document Type: Article

Publication Date: 3/2023

Document Language: English

Document ID (Org No.): 2001286703

pISSN: 2147-9542

Issues

Authors:

Selçuk Demirezen

Publisher:

Gazi University

Journal:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 1, pp.53-61

Document Type:

Article

Publication Date:

3/2023

Document Language:

English

Document ID (Org No.):

2001286703

pISSN:

2147-9542