Anomalous Electrical Characteristics of Ion Implanted P+-n Juntions

Najeeb SIDDIQUI

Article Details

Anomalous Electrical Characteristics of Ion Implanted P+-n Juntions

Authors:

Najeeb SIDDIQUI

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 1998 Vol.22 Issue 3, pp.211-218

Document Type:

Article

Publication Date:

2/1998

Document Language:

Turkish

Document ID (Org No.):

2000763552

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101

Keywords:

Abstract:

 

Electrical characteristics of three P+ - n diodes fabricated on high resistivity silicon by ion implantation technique are studied by making capacitance-voltage (C-V), reverse current-voltage (I-V) and dielectric spectroscopy of semiconductor (DSS) measurements. The C-V characteristics show abrupt fall in capacitance, while I-V characteristics show abrupt rise in current at the same voltages as in the C-V characteristics. These abrupt discontinuities are ascribed to the formation of defect clusters in the lightly doped base regions where charge transfer might be taking place by thermally assisted tunneling. Low activation energies obtained in the DSS measurements also point toward the same mechanism.

 

Electrical characteristics of three P+ - n diodes fabricated on high resistivity silicon by ion implantation technique are studied by making capacitance-voltage (C-V), reverse current-voltage (I-V) and dielectric spectroscopy of semiconductor (DSS) measurements. The C-V characteristics show abrupt fall in capacitance, while I-V characteristics show abrupt rise in current at the same voltages as in the C-V characteristics. These abrupt discontinuities are ascribed to the formation of defect clusters in the lightly doped base regions where charge transfer might be taking place by thermally assisted tunneling. Low activation energies obtained in the DSS measurements also point toward the same mechanism.

Article Details

Anomalous Electrical Characteristics of Ion Implanted P+-n Juntions

Authors:

Najeeb SIDDIQUI

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 1998 Vol.22 Issue 3, pp.211-218

Document Type:

Article

Publication Date:

2/1998

Document Language:

Turkish

Document ID (Org No.):

2000763552

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101

Turk. J. Phys.

22

(1998)

211-218. Full text: pdf Other articles published in the same issue: Turk. J. Phys.

vol.22

iss.3.

Issues

Article Details

Anomalous Electrical Characteristics of Ion Implanted P+-n Juntions

Authors: Najeeb SIDDIQUI

Publisher: TUBITAK

Journal: Turkish Journal of Physics 1998 Vol.22 Issue 3, pp.211-218

Document Type: Article

Publication Date: 2/1998

Document Language: Turkish

Document ID (Org No.): 2000763552

Frequency: Bimonthly

eISSN: 1303-6122

pISSN: 1300-0101

Turk. J. Phys.

22

(1998)

211-218. Full text: pdf Other articles published in the same issue: Turk. J. Phys.

vol.22

iss.3.

Issues

Authors:

Najeeb SIDDIQUI

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 1998 Vol.22 Issue 3, pp.211-218

Document Type:

Article

Publication Date:

2/1998

Document Language:

Turkish

Document ID (Org No.):

2000763552

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101