Effects of the Back Reflector on the Optical Enhancement Factor and Quantum Efficiency of a-Si:H p-i-n Solar Cells

Ruhi KAPLAN; Bengü KAPLAN

Article Details

Effects of the Back Reflector on the Optical Enhancement Factor and Quantum Efficiency of a-Si:H p-i-n Solar Cells

Authors:

Ruhi KAPLAN | Bengü KAPLAN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2002 Vol.26 Issue 5, pp.363-368

Document Type:

Article

Publication Date:

4/2002

Document Language:

Turkish

Document ID (Org No.):

2000762093

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101

Keywords:

Abstract:

 

The effect of tin oxide (SnO2) texture and back reflector (BR) on  optical enhancement factor  has been extensively investigated in a series of 4  a-Si:H p-i-n solar cells. The internal quantum efficiency QE in the wavelength  range 550--750 nm has been analyzed using an optical model. The optical  enhancement factor m, which is a wavelength-dependent fitting parameter,  represents the increase in optical pathlength relative to the i-layer thickness.  Our solar cells, at low or high haze SnO2 with an Al BR, have negligible  optical enhancement, m < 1.5, representing failure to obtain multiple  reflections. This is consistent with large parasitic absorption at the Al/Si  interface. Our solar cells at high haze SnO2 with ZnO/Al or ZnO/Ag BRs  have peak values of m \sim 3-4, with ZnO/Ag having slightly larger values  than ZnO/Al. The maximum values of m , and thus the QE increase with  reflectivity of the BR, indicates that efficient light trapping needs a very  reflective BR to minimize parasitic absorption losses with each pass.

 

The effect of tin oxide (SnO2) texture and back reflector (BR) on  optical enhancement factor  has been extensively investigated in a series of 4  a-Si:H p-i-n solar cells. The internal quantum efficiency QE in the wavelength  range 550--750 nm has been analyzed using an optical model. The optical  enhancement factor m, which is a wavelength-dependent fitting parameter,  represents the increase in optical pathlength relative to the i-layer thickness.  Our solar cells, at low or high haze SnO2 with an Al BR, have negligible  optical enhancement, m < 1.5, representing failure to obtain multiple  reflections. This is consistent with large parasitic absorption at the Al/Si  interface. Our solar cells at high haze SnO2 with ZnO/Al or ZnO/Ag BRs  have peak values of m \sim 3-4, with ZnO/Ag having slightly larger values  than ZnO/Al. The maximum values of m , and thus the QE increase with  reflectivity of the BR, indicates that efficient light trapping needs a very  reflective BR to minimize parasitic absorption losses with each pass.

Article Details

Effects of the Back Reflector on the Optical Enhancement Factor and Quantum Efficiency of a-Si:H p-i-n Solar Cells

Authors:

Ruhi KAPLAN | Bengü KAPLAN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2002 Vol.26 Issue 5, pp.363-368

Document Type:

Article

Publication Date:

4/2002

Document Language:

Turkish

Document ID (Org No.):

2000762093

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101

amorphous (a-) Si:H p-i-n solar cells

back reflectors

light trapping

quantum efficiency.

Issues

Article Details

Effects of the Back Reflector on the Optical Enhancement Factor and Quantum Efficiency of a-Si:H p-i-n Solar Cells

Authors: Ruhi KAPLAN | Bengü KAPLAN

Publisher: TUBITAK

Journal: Turkish Journal of Physics 2002 Vol.26 Issue 5, pp.363-368

Document Type: Article

Publication Date: 4/2002

Document Language: Turkish

Document ID (Org No.): 2000762093

Frequency: Bimonthly

eISSN: 1303-6122

pISSN: 1300-0101

amorphous (a-) Si:H p-i-n solar cells

back reflectors

light trapping

quantum efficiency.

Issues

Authors:

Ruhi KAPLAN | Bengü KAPLAN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2002 Vol.26 Issue 5, pp.363-368

Document Type:

Article

Publication Date:

4/2002

Document Language:

Turkish

Document ID (Org No.):

2000762093

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101