CuInS2 Ternary Compound as Absorption Layer for Solar Cell Fabrication

N. K, Kasim

Article Details

CuInS2 Ternary Compound as Absorption Layer for Solar Cell Fabrication

Authors:

N. K, Kasim

Publisher:

University of Baghdad

Journal:

Iraqi Journal of Physics Vol.7 Issue 8, pp.99-103

Document Type:

Article

Publication Date:

12/2009

Document Language:

English

Document ID (Org No.):

2001368598

pISSN:

2664-5548

Keywords:

CuInS2 Ternary Compound

Abstract:

 Copper indium disulphide, CuInS2, is a promising absorber material for thin film photovoltaic which has recently attracted considerable attention due to its suitability to reach high efficiency solar cells by using low cost techniques. In this work CuInS2 thin films have been deposited by chemical spray pyrolysis onto glass substrates at ambient atmosphere, using different [Cu]/[In] ratio in the aqueous solutions at substrate temperature 3000Cand different annealing temperatures . Structural and optical properties of CIS films were analyzed by X-ray diffraction, and optical spectroscopy. Sprayed CIS films are polycrystalline with a chalcopyrite structure with a preferential orientation along the 112 direction and no remains of oxides in higher ratio were found after spraying in suitable conditions. X-ray microanalysis shows that a chemical composition near to stoichiometry can be obtained. An optical properties showed this material have a direct band gap and the energy band in the range of about 1.4 -1.61 eV at different ratio was found for sprayed CIS thin films.

Article Details

CuInS2 Ternary Compound as Absorption Layer for Solar Cell Fabrication

Authors: N. K, Kasim

Publisher: University of Baghdad

Journal: Iraqi Journal of Physics Vol.7 Issue 8, pp.99-103

Document Type: Article

Publication Date: 12/2009

Document Language: English

Document ID (Org No.): 2001368598

pISSN: 2664-5548

CuInS2 Ternary Compound

Issues

Authors:

N. K, Kasim

Publisher:

University of Baghdad

Journal:

Iraqi Journal of Physics Vol.7 Issue 8, pp.99-103

Document Type:

Article

Publication Date:

12/2009

Document Language:

English

Document ID (Org No.):

2001368598

pISSN:

2664-5548