A NUMERICAL MODEL TO DETERMINE THE DIFFUSION LENGTH BY EBIC METHOD. STUDY OF Si CASE

Elateche Z; Nouiri A

Article Details

A NUMERICAL MODEL TO DETERMINE THE DIFFUSION LENGTH BY EBIC METHOD. STUDY OF Si CASE

Authors:

Elateche Z | Nouiri A

Publisher:

Université Mentouri de Constantine

Journal:

Sciences & technologie. A, sciences exactes Issue 24, pp.21-24

Document Type:

Article

Publication Date:

12/2006

Document Language:

English

Document ID (Org No.):

2001909401

pISSN:

2602-7739

Keywords:

Abstract:

 ilicon is a very important material used in solar cells fabrication. The characterization
of semiconductors by a scanning electron microscopy (SEM) using techniques like electron
beam induced current (EBIC) and cathodoluminescence (CL) is of great interest. Nowadays
Monte Carlo (MC) method becomes a very important tool to simulate the diffusion length.
In this work, we propose a new Monte Carlo calculation of electron depth and energy
dissipation in silicon. Our results are compared with other analytical analysis. Concerning
the electron depth, there is a good agreement with other models, in particular at low beam
energy.

Article Details

A NUMERICAL MODEL TO DETERMINE THE DIFFUSION LENGTH BY EBIC METHOD. STUDY OF Si CASE

Authors:

Elateche Z | Nouiri A

Publisher:

Université Mentouri de Constantine

Journal:

Sciences & technologie. A, sciences exactes Issue 24, pp.21-24

Document Type:

Article

Publication Date:

12/2006

Document Language:

English

Document ID (Org No.):

2001909401

pISSN:

2602-7739

EBIC techniques

diffusion length

Calculation

Silicon

Issues

Article Details

A NUMERICAL MODEL TO DETERMINE THE DIFFUSION LENGTH BY EBIC METHOD. STUDY OF Si CASE

Authors: Elateche Z | Nouiri A

Publisher: Université Mentouri de Constantine

Journal: Sciences & technologie. A, sciences exactes Issue 24, pp.21-24

Document Type: Article

Publication Date: 12/2006

Document Language: English

Document ID (Org No.): 2001909401

pISSN: 2602-7739

EBIC techniques

diffusion length

Calculation

Silicon

Issues

Authors:

Elateche Z | Nouiri A

Publisher:

Université Mentouri de Constantine

Journal:

Sciences & technologie. A, sciences exactes Issue 24, pp.21-24

Document Type:

Article

Publication Date:

12/2006

Document Language:

English

Document ID (Org No.):

2001909401

pISSN:

2602-7739