Optimizing dielectric constants for enhanced performance in nanoscale DG-FinFETs: A comprehensive study on short channel effects

Nura Muhammad Shehu; Garba Babaji; Mutari Hajara Ali

doi:10.14419/y4q1p726

Article Details

Optimizing dielectric constants for enhanced performance in nanoscale DG-FinFETs: A comprehensive study on short channel effects

Authors:

Nura Muhammad Shehu | Garba Babaji | Mutari Hajara Ali

Publisher:

Science Publishing Corporation

Journal:

International Journal of Basic and Applied Sciences Vol.13 Issue 1, pp.1-6

Document Type:

Article

Publication Date:

5/2024

Document Language:

English

Document ID (Org No.):

2001387105

pISSN:

2227-5053

DOI:

10.14419/y4q1p726

Keywords:

Abstract:

 This study explores how variations in fin and gate dielectric constants impact nanoscale, DG-FinFETs’ sensitivity to Short Channel Effects (SCEs). Various fin (channel) materials; Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN), and Silicon (Si), are considered. PADRE simulation environment is used to investigate the threshold Voltage (Vth) Roll-off, a crucial performance parameter. GaAs-FinFET, with a gate dielectric and fin dielectric constant values of 15 and 45 shows the lowest threshold voltage of 0.412 V. The study concludes that FinFETs with a higher fin dielectric constant than gate dielectric constant exhibit reduced SCEs, leading to lower power consumption, faster switching, and improved efficiency. This underscores the importance of optimizing dielectric constants, especially the fin dielectric constant, for enhanced DG-FinFET performance.

Article Details

Optimizing dielectric constants for enhanced performance in nanoscale DG-FinFETs: A comprehensive study on short channel effects

Authors:

Nura Muhammad Shehu | Garba Babaji | Mutari Hajara Ali

Publisher:

Science Publishing Corporation

Journal:

International Journal of Basic and Applied Sciences Vol.13 Issue 1, pp.1-6

Document Type:

Article

Publication Date:

5/2024

Document Language:

English

Document ID (Org No.):

2001387105

pISSN:

2227-5053

DOI:

10.14419/y4q1p726

DG-FinFETs

Dielectric Constant

Efficiency

PADRE

Short Channel Effects

Threshold Voltage

Issues

Article Details

Optimizing dielectric constants for enhanced performance in nanoscale DG-FinFETs: A comprehensive study on short channel effects

Authors: Nura Muhammad Shehu | Garba Babaji | Mutari Hajara Ali

Publisher: Science Publishing Corporation

Journal: International Journal of Basic and Applied Sciences Vol.13 Issue 1, pp.1-6

Document Type: Article

Publication Date: 5/2024

Document Language: English

Document ID (Org No.): 2001387105

pISSN: 2227-5053

DOI: 10.14419/y4q1p726

DG-FinFETs

Dielectric Constant

Efficiency

PADRE

Short Channel Effects

Threshold Voltage

Issues

Authors:

Nura Muhammad Shehu | Garba Babaji | Mutari Hajara Ali

Publisher:

Science Publishing Corporation

Journal:

International Journal of Basic and Applied Sciences Vol.13 Issue 1, pp.1-6

Document Type:

Article

Publication Date:

5/2024

Document Language:

English

Document ID (Org No.):

2001387105

pISSN:

2227-5053

DOI:

10.14419/y4q1p726