HIGHLY ORIENTED DOPED AND UNDOPED TIN OXIDE THIN FILMS GROWN ON MULTICRYSTALLINE SILICON SUBSTRATE

Smaali A; Outemzabet-houari R

Article Details

HIGHLY ORIENTED DOPED AND UNDOPED TIN OXIDE THIN FILMS GROWN ON MULTICRYSTALLINE SILICON SUBSTRATE

Authors:

Smaali A | Outemzabet-houari R

Publisher:

Université Mentouri de Constantine

Journal:

Sciences & technologie. B, Sciences de l’ingénieur Issue 29, pp.23-26

Document Type:

Article

Publication Date:

6/2009

Document Language:

English

Document ID (Org No.):

2001912061

pISSN:

2602-7801

Keywords:

Abstract:

 Polycrystalline antimony doped and undoped tin oxide thin films are grown by chemical vapor
deposition on multicrystalline silicon and on glass substrates. The latter substrate was considered for
comparative study on growth and characterization. The doping was achieved with various content of
Sb in the starting material. X ray diffraction patterns let us to find preferential growth which is not
the same according to the substrate. On the glass substrate the grain grows in the (101, 211, 200)
crystallographic direction while it grows in the (110, 211, 101) orientation when deposited on
polycrystalline silicon substrate at the same time and in the same reactor. The resultant films possess
a columnar microstructure perpendicular to the substrate and exhibits grains with nanometer size.
The sheet resistance measured on doped layers are significantly improved compared to that obtained
on undoped ones, in the same conditions i.e. substrate temperature Ts=440°C, duration of the
deposition 10 min and flowing oxygen about 2L/min. Contrary to results obtained on tin oxide layer
deposited on monocrystalline silicon in previous work the microstructure seems to be dependant on
the kind of the substrate.

Article Details

HIGHLY ORIENTED DOPED AND UNDOPED TIN OXIDE THIN FILMS GROWN ON MULTICRYSTALLINE SILICON SUBSTRATE

Authors:

Smaali A | Outemzabet-houari R

Publisher:

Université Mentouri de Constantine

Journal:

Sciences & technologie. B, Sciences de l’ingénieur Issue 29, pp.23-26

Document Type:

Article

Publication Date:

6/2009

Document Language:

English

Document ID (Org No.):

2001912061

pISSN:

2602-7801

Doping

structural properties

diffractogram

Issues

Article Details

HIGHLY ORIENTED DOPED AND UNDOPED TIN OXIDE THIN FILMS GROWN ON MULTICRYSTALLINE SILICON SUBSTRATE

Authors: Smaali A | Outemzabet-houari R

Publisher: Université Mentouri de Constantine

Journal: Sciences & technologie. B, Sciences de l’ingénieur Issue 29, pp.23-26

Document Type: Article

Publication Date: 6/2009

Document Language: English

Document ID (Org No.): 2001912061

pISSN: 2602-7801

Doping

structural properties

diffractogram

Issues

Authors:

Smaali A | Outemzabet-houari R

Publisher:

Université Mentouri de Constantine

Journal:

Sciences & technologie. B, Sciences de l’ingénieur Issue 29, pp.23-26

Document Type:

Article

Publication Date:

6/2009

Document Language:

English

Document ID (Org No.):

2001912061

pISSN:

2602-7801