Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Ş. KAYA; E. YILMAZ; A. ÇETİNKAYA

doi:https://doi.org/10.1501/nuclear_0000000012

Article Details

Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Authors:

Ş. KAYA | E. YILMAZ | A. ÇETİNKAYA

Journal:

Journal of Nuclear Sciences 2015 Vol.2 Issue 2, pp.48-52

Document Type:

Article

Publication Date:

6/2015

Document Language:

English

Document ID (Org No.):

2000743259

DOI:

https://doi.org/10.1501/nuclear_0000000012

Abstract:

 


The effects of gamma-ray exposures on the electrical characteristics of Silicon Nitride (Si3N4) metal–insulator–semiconductor (MIS) structures have been investigated at room temperature. The MIS structures were irradiated with the GAMMACELL 220 Co-60 radioactive source. The distributions of interface states and series resistance were determined from the C–V and G/ω-V characteristics by taking into account the irradiation-dependent the barrier height. Both the values of series resistance, interface states and barrier heights enhanced with increasing dose. Experimental results demonstrate that gamma-ray irradiations have the significant effects on electrical characteristics of Si3N4 MIS structures.

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Article Details

Influences of Irradiation on the C–V and G/ ω –V Characteristics of Si3N4 MIS Capacitors

Authors: Ş. KAYA | E. YILMAZ | A. ÇETİNKAYA

Journal: Journal of Nuclear Sciences 2015 Vol.2 Issue 2, pp.48-52

Document Type: Article

Publication Date: 6/2015

Document Language: English

Document ID (Org No.): 2000743259

DOI: https://doi.org/10.1501/nuclear_0000000012

Issues

Authors:

Ş. KAYA | E. YILMAZ | A. ÇETİNKAYA

Journal:

Journal of Nuclear Sciences 2015 Vol.2 Issue 2, pp.48-52

Document Type:

Article

Publication Date:

6/2015

Document Language:

English

Document ID (Org No.):

2000743259

DOI:

https://doi.org/10.1501/nuclear_0000000012