Near Bandedge Optical Absorption Processes in Semi Insulating and N-Type GaAs

Tacettin YILDIRIM; Sebahattin TÜZEMEN; Seydi DOĞAN

Article Details

Near Bandedge Optical Absorption Processes in Semi Insulating and N-Type GaAs

Authors:

Tacettin YILDIRIM | Sebahattin TÜZEMEN | Seydi DOĞAN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2002 Vol.26 Issue 1, pp.29-32

Document Type:

Article

Publication Date:

12/2001

Document Language:

Turkish

Document ID (Org No.):

2000762264

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101

Keywords:

Abstract:

 

Near bandedge optical absorption processes in semi-insulating (SI)  GaAs and Te-doped n-type GaAs crystals were investigated in the  temperature range 10--300 K. We observed absorption peaks whose  maximum energies Em, ranging from 1.498 to 1.485 eV decrease as  the temperature increases from 10 K to 100 K. The peaks for both SI  and n-type GaAs disappeared above 100 K. Extrapolating the graphs of   Eg-Em versus temperature, we observed that near bandedge  absorption is overlapped by the conduction band at about 220 K and 260  K for n-type and SI samples, respectively.  Furthermore, we  demonstrated that the absorption in the region of near bandedge can be  photo-quenched using further irradiation after EL2 photo-quenching at  higher temperatures.  Comparison of the absorption measurements with  the spectral photo-current measurements, we conclude that Reverse  Contrast (RC) centres that cause such absorption at energies close to  the bandedge have no intra-centre transition.

 

Near bandedge optical absorption processes in semi-insulating (SI)  GaAs and Te-doped n-type GaAs crystals were investigated in the  temperature range 10--300 K. We observed absorption peaks whose  maximum energies Em, ranging from 1.498 to 1.485 eV decrease as  the temperature increases from 10 K to 100 K. The peaks for both SI  and n-type GaAs disappeared above 100 K. Extrapolating the graphs of   Eg-Em versus temperature, we observed that near bandedge  absorption is overlapped by the conduction band at about 220 K and 260  K for n-type and SI samples, respectively.  Furthermore, we  demonstrated that the absorption in the region of near bandedge can be  photo-quenched using further irradiation after EL2 photo-quenching at  higher temperatures.  Comparison of the absorption measurements with  the spectral photo-current measurements, we conclude that Reverse  Contrast (RC) centres that cause such absorption at energies close to  the bandedge have no intra-centre transition.

Article Details

Near Bandedge Optical Absorption Processes in Semi Insulating and N-Type GaAs

Authors:

Tacettin YILDIRIM | Sebahattin TÜZEMEN | Seydi DOĞAN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2002 Vol.26 Issue 1, pp.29-32

Document Type:

Article

Publication Date:

12/2001

Document Language:

Turkish

Document ID (Org No.):

2000762264

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101

GaAs

near bandedge absorption

reverse-contrast

Issues

Article Details

Near Bandedge Optical Absorption Processes in Semi Insulating and N-Type GaAs

Authors: Tacettin YILDIRIM | Sebahattin TÜZEMEN | Seydi DOĞAN

Publisher: TUBITAK

Journal: Turkish Journal of Physics 2002 Vol.26 Issue 1, pp.29-32

Document Type: Article

Publication Date: 12/2001

Document Language: Turkish

Document ID (Org No.): 2000762264

Frequency: Bimonthly

eISSN: 1303-6122

pISSN: 1300-0101

GaAs

near bandedge absorption

reverse-contrast

Issues

Authors:

Tacettin YILDIRIM | Sebahattin TÜZEMEN | Seydi DOĞAN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2002 Vol.26 Issue 1, pp.29-32

Document Type:

Article

Publication Date:

12/2001

Document Language:

Turkish

Document ID (Org No.):

2000762264

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101