Current transportin Au/SPAN/n-GaAs structures from Current-Voltage-Temperature characteristics

Djeghlouf Asmaa; Hamri Djilalia; Teffahi Abdelkader; Saidane Abdelkader; Henini Mohamed

Article Details

Current transportin Au/SPAN/n-GaAs structures from Current-Voltage-Temperature characteristics

Authors:

Djeghlouf Asmaa | Hamri Djilalia | Teffahi Abdelkader | Saidane Abdelkader | Henini Mohamed

Publisher:

Ecole Nationale supérieure Polytechnique

Journal:

Communication science et technologie Vol.16 Issue 1, pp.36-47

Document Type:

Article

Publication Date:

1/2018

Document Language:

English

Document ID (Org No.):

2001541999

pISSN:

2773-3483

Keywords:

Abstract:

 Current–voltage (I–V) characteristics of Au/SPAN/n-GaAs Schottky
barrier diodes(SBDs) have been investigated in the wide temperature
range of 80–300 K. Zero-bias barrier height (ΦB0) and ideality factor (n)
are temperature dependent, withΦB0 increasing and n decreasing with
increasing temperature. ΦB0 versus n, and (n-1-1) versus q/2kT plots were
drawn to obtain an evidence of Gaussian distribution (GD) of interface
Barrier Heights.Plots show relatively important standard deviation values
that indicate interface inhomogeneities and complex current transport
through the interface.Temperature dependent I–V characteristics of
Au/SPAN/n-GaAs SBDs have successfully explained current transport in
these devices. It is concluded that current transport is TE dominated with
double-Gaussian distribution of SBHs rather than other mechanisms.

Article Details

Current transportin Au/SPAN/n-GaAs structures from Current-Voltage-Temperature characteristics

Authors:

Djeghlouf Asmaa | Hamri Djilalia | Teffahi Abdelkader | Saidane Abdelkader | Henini Mohamed

Publisher:

Ecole Nationale supérieure Polytechnique

Journal:

Communication science et technologie Vol.16 Issue 1, pp.36-47

Document Type:

Article

Publication Date:

1/2018

Document Language:

English

Document ID (Org No.):

2001541999

pISSN:

2773-3483

I–V-T characteristics

Current transport

Gaussian distribution (GD)

Schottky barrier diode

SPAN

Issues

Article Details

Current transportin Au/SPAN/n-GaAs structures from Current-Voltage-Temperature characteristics

Authors: Djeghlouf Asmaa | Hamri Djilalia | Teffahi Abdelkader | Saidane Abdelkader | Henini Mohamed

Publisher: Ecole Nationale supérieure Polytechnique

Journal: Communication science et technologie Vol.16 Issue 1, pp.36-47

Document Type: Article

Publication Date: 1/2018

Document Language: English

Document ID (Org No.): 2001541999

pISSN: 2773-3483

I–V-T characteristics

Current transport

Gaussian distribution (GD)

Schottky barrier diode

SPAN

Issues

Authors:

Djeghlouf Asmaa | Hamri Djilalia | Teffahi Abdelkader | Saidane Abdelkader | Henini Mohamed

Publisher:

Ecole Nationale supérieure Polytechnique

Journal:

Communication science et technologie Vol.16 Issue 1, pp.36-47

Document Type:

Article

Publication Date:

1/2018

Document Language:

English

Document ID (Org No.):

2001541999

pISSN:

2773-3483