Systematic Investigation on the Synergistic Impact of Gallium (Ga)-Boron (B) Co-Doping on the Features of ZnO Films

Kenan Özel; Abdullah Atılgan

Article Details

Systematic Investigation on the Synergistic Impact of Gallium (Ga)-Boron (B) Co-Doping on the Features of ZnO Films

Authors:

Kenan Özel | Abdullah Atılgan

Publisher:

Gazi University

Main Topics:

Semiconductors

Journal:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 4, pp.442-451

Document Type:

Article

Publication Date:

12/2023

Document Language:

English

Document ID (Org No.):

2001309093

pISSN:

2147-9542

Keywords:

Abstract:

 Herein, gallium-boron co-doped ZnO GBZO thin films TFs of varying percentages of Ga and B doping content were coated on glass slides via spin-coating technique. The impact of doping content on the features of GBZO TFs was comprehensively probed in this work. The characterization results demonstrate that the doping content has a profound impact on the features of GBZO TFs. The X-ray diffraction results verify the polycrystalline nature of GBZO TFs with varying diffraction peak intensities. AFM images disclose the smooth coating of GBZO TFs with low surface roughness. UVVis-NIR transmittance spectra reveal that the deposited TFs exhibit high transparency over 86  in range of 400-800 nm wavelength with excellent optical properties. The electrical resistance measurements indicate that GBZO TFs having doping concentrations of 2.5 at.  of Ga and 0.5 at.  of B has the lower resistivity, and the resistivity of the samples are strongly affected by the doping content. The obtained knowledge from this study could be useful for the fabrication of TF based optoelectronic devices.

 Herein, gallium-boron co-doped ZnO GBZO thin films TFs of varying percentages of Ga and B doping content were coated on glass slides via spin-coating technique. The impact of doping content on the features of GBZO TFs was comprehensively probed in this work. The characterization results demonstrate that the doping content has a profound impact on the features of GBZO TFs. The X-ray diffraction results verify the polycrystalline nature of GBZO TFs with varying diffraction peak intensities. AFM images disclose the smooth coating of GBZO TFs with low surface roughness. UVVis-NIR transmittance spectra reveal that the deposited TFs exhibit high transparency over 86  in range of 400-800 nm wavelength with excellent optical properties. The electrical resistance measurements indicate that GBZO TFs having doping concentrations of 2.5 at.  of Ga and 0.5 at.  of B has the lower resistivity, and the resistivity of the samples are strongly affected by the doping content. The obtained knowledge from this study could be useful for the fabrication of TF based optoelectronic devices.

 Herein, gallium-boron co-doped ZnO GBZO thin films TFs of varying percentages of Ga and B doping content were coated on glass slides via spin-coating technique. The impact of doping content on the features of GBZO TFs was comprehensively probed in this work. The characterization results demonstrate that the doping content has a profound impact on the features of GBZO TFs. The X-ray diffraction results verify the polycrystalline nature of GBZO TFs with varying diffraction peak intensities. AFM images disclose the smooth coating of GBZO TFs with low surface roughness. UVVis-NIR transmittance spectra reveal that the deposited TFs exhibit high transparency over 86  in range of 400-800 nm wavelength with excellent optical properties. The electrical resistance measurements indicate that GBZO TFs having doping concentrations of 2.5 at.  of Ga and 0.5 at.  of B has the lower resistivity, and the resistivity of the samples are strongly affected by the doping content. The obtained knowledge from this study could be useful for the fabrication of TF based optoelectronic devices.

 Herein, gallium-boron co-doped ZnO GBZO thin films TFs of varying percentages of Ga and B doping content were coated on glass slides via spin-coating technique. The impact of doping content on the features of GBZO TFs was comprehensively probed in this work. The characterization results demonstrate that the doping content has a profound impact on the features of GBZO TFs. The X-ray diffraction results verify the polycrystalline nature of GBZO TFs with varying diffraction peak intensities. AFM images disclose the smooth coating of GBZO TFs with low surface roughness. UVVis-NIR transmittance spectra reveal that the deposited TFs exhibit high transparency over 86  in range of 400-800 nm wavelength with excellent optical properties. The electrical resistance measurements indicate that GBZO TFs having doping concentrations of 2.5 at.  of Ga and 0.5 at.  of B has the lower resistivity, and the resistivity of the samples are strongly affected by the doping content. The obtained knowledge from this study could be useful for the fabrication of TF based optoelectronic devices.

Article Details

Systematic Investigation on the Synergistic Impact of Gallium (Ga)-Boron (B) Co-Doping on the Features of ZnO Films

Authors:

Kenan Özel | Abdullah Atılgan

Publisher:

Gazi University

Main Topics:

Semiconductors

Journal:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 4, pp.442-451

Document Type:

Article

Publication Date:

12/2023

Document Language:

English

Document ID (Org No.):

2001309093

pISSN:

2147-9542

Co-doped ZnO Thin Film

Ga Doping

B Doping

Spin Coating Method

Issues

Article Details

Systematic Investigation on the Synergistic Impact of Gallium (Ga)-Boron (B) Co-Doping on the Features of ZnO Films

Authors: Kenan Özel | Abdullah Atılgan

Publisher: Gazi University

Main Topics: Semiconductors

Journal: Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 4, pp.442-451

Document Type: Article

Publication Date: 12/2023

Document Language: English

Document ID (Org No.): 2001309093

pISSN: 2147-9542

Co-doped ZnO Thin Film

Ga Doping

B Doping

Spin Coating Method

Issues

Authors:

Kenan Özel | Abdullah Atılgan

Publisher:

Gazi University

Main Topics:

Semiconductors

Journal:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 4, pp.442-451

Document Type:

Article

Publication Date:

12/2023

Document Language:

English

Document ID (Org No.):

2001309093

pISSN:

2147-9542