Two-dimensional MoS2 as a new material for electronic devices

Natalia IZYUMSKAYA; Denis O. DEMCHENKO; Vitaliy AVRUTIN

Article Details

Two-dimensional MoS2 as a new material for electronic devices

Authors:

Natalia IZYUMSKAYA | Denis O. DEMCHENKO | Vitaliy AVRUTIN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2014 Vol.38 Issue 3, pp.478-496

Document Type:

Article

Publication Date:

2/2014

Document Language:

Turkish

Document ID (Org No.):

2000759999

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101

Keywords:

Abstract:

 

We overview fundamental properties, preparation techniques, and potential device applications of single- and few-monolayer-thick molybdenum disulfide MoS2 belonging to a new emerging class of materials: 2-dimensional semiconductors. To a large extent, the interest in the 2-dimensional materials is fueled by the quest for alternatives to graphene, which is hardly suitable for electronic devices because of the lack of a band gap. A unique combination of physical properties, including flexibility, high electron mobility, and optical transparency combined with a large band gap tunable from indirect 1.2 eV for bulk to direct 1.9 eV for a monolayer, make MoS2 attractive for a variety of electronic and optoelectronic devices. The first device demonstrations are very encouraging: field-effect transistors with high current ON/OFF ratios, high-sensitivity phototransistors, logic circuits, and amplifiers based on monolayer-MoS2 have been demonstrated. The layered structure of MoS2 with other transition-metal dichalcogenides (WS2, WSe2, MoSe2, etc.) makes it possible to grow ultrathin, so-called van der Waals heterostructures with very abrupt interfaces and low defect density and paves the way for fabricating multilayered materials for novel electronic and optical devices. However, further progress towards potential commercialization of monolayer-MoS2-based devices requires serious efforts in the development of scalable fabrication techniques capable of producing large-area electronic-quality material.

 

We overview fundamental properties, preparation techniques, and potential device applications of single- and few-monolayer-thick molybdenum disulfide MoS2 belonging to a new emerging class of materials: 2-dimensional semiconductors. To a large extent, the interest in the 2-dimensional materials is fueled by the quest for alternatives to graphene, which is hardly suitable for electronic devices because of the lack of a band gap. A unique combination of physical properties, including flexibility, high electron mobility, and optical transparency combined with a large band gap tunable from indirect 1.2 eV for bulk to direct 1.9 eV for a monolayer, make MoS2 attractive for a variety of electronic and optoelectronic devices. The first device demonstrations are very encouraging: field-effect transistors with high current ON/OFF ratios, high-sensitivity phototransistors, logic circuits, and amplifiers based on monolayer-MoS2 have been demonstrated. The layered structure of MoS2 with other transition-metal dichalcogenides (WS2, WSe2, MoSe2, etc.) makes it possible to grow ultrathin, so-called van der Waals heterostructures with very abrupt interfaces and low defect density and paves the way for fabricating multilayered materials for novel electronic and optical devices. However, further progress towards potential commercialization of monolayer-MoS2-based devices requires serious efforts in the development of scalable fabrication techniques capable of producing large-area electronic-quality material.

Article Details

Two-dimensional MoS2 as a new material for electronic devices

Authors:

Natalia IZYUMSKAYA | Denis O. DEMCHENKO | Vitaliy AVRUTIN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2014 Vol.38 Issue 3, pp.478-496

Document Type:

Article

Publication Date:

2/2014

Document Language:

Turkish

Document ID (Org No.):

2000759999

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101

Transition-metal dichalcogenide

molybdenum disulfide MoS2

2-dimensional semiconductor

exfoliation

chemical vapor deposition

field-effect transistor

van der Waals heterostructures

Issues

Article Details

Authors: Natalia IZYUMSKAYA | Denis O. DEMCHENKO | Vitaliy AVRUTIN

Publisher: TUBITAK

Journal: Turkish Journal of Physics 2014 Vol.38 Issue 3, pp.478-496

Document Type: Article

Publication Date: 2/2014

Document Language: Turkish

Document ID (Org No.): 2000759999

Frequency: Bimonthly

eISSN: 1303-6122

pISSN: 1300-0101

Issues

Authors:

Natalia IZYUMSKAYA | Denis O. DEMCHENKO | Vitaliy AVRUTIN

Publisher:

TUBITAK

Journal:

Turkish Journal of Physics 2014 Vol.38 Issue 3, pp.478-496

Document Type:

Article

Publication Date:

2/2014

Document Language:

Turkish

Document ID (Org No.):

2000759999

Frequency:

Bimonthly

eISSN:

1303-6122

pISSN:

1300-0101