AN ADVANCED MODEL FOR DOPANT DIFFUSION IN HEAVILY IMPLANTED POLYCRYSTALLINE SILICON THIN FILMS

Abadli S; Mansour F

Article Details

AN ADVANCED MODEL FOR DOPANT DIFFUSION IN HEAVILY IMPLANTED POLYCRYSTALLINE SILICON THIN FILMS

Authors:

Abadli S | Mansour F

Publisher:

Université Mentouri de Constantine

Journal:

Sciences & technologie. B, Sciences de l’ingénieur Issue 26, pp.23-30

Document Type:

Article

Publication Date:

12/2007

Document Language:

English

Document ID (Org No.):

2001912028

pISSN:

2602-7801

Keywords:

Abstract:

 This work is dedicated to the study of the transient enhanced diffusion (TED) of boron in polycrystalline-silicon
thin films. This phenomenon is a major problem for the development of P+ polysilicon gate metal-oxide-semiconductor
(MOS) devices; for future polysilicon technologies. The highly doped, P+, gate is made by ion implantation followed
by thermal post-implantation annealing. In these conditions, the boron atoms diffuse in a transient and enhanced way
which can be some thousand times to some hundred times faster than in equilibrium. At the same time, the solubility
limt excess due to the very strong doping level and ion-implantation damages, lead to various complex phenomena
sush as dopant trapping, segregation, and clustering. Taken all these phenomena into account, we propose a theoretical
one-dimensional two-stream diffusion model adapted to the granular structure of polycrystalline-silicon and to the
effects of the strong-concentrations. This model includes dopant clustering in grains as well as in grain boundaries.
Moreover, growth of grains and energy barrier height are coupled with the dopant diffusion coefficients and the
process temperature based on thermodynamic concepts. The adjustment of the simulated profiles with the experimental
SIMS profiles, for short treatment times ranging between 1 and 30 minutes at different temperatures (700, 750 and
800°C), will allow the study of the boron transient enhanced diffusion; as well as the understanding of the grainsgrowth
effect on boron diffusion during annealing.

Article Details

AN ADVANCED MODEL FOR DOPANT DIFFUSION IN HEAVILY IMPLANTED POLYCRYSTALLINE SILICON THIN FILMS

Authors:

Abadli S | Mansour F

Publisher:

Université Mentouri de Constantine

Journal:

Sciences & technologie. B, Sciences de l’ingénieur Issue 26, pp.23-30

Document Type:

Article

Publication Date:

12/2007

Document Language:

English

Document ID (Org No.):

2001912028

pISSN:

2602-7801

modeling

boron

diffusion

grain

growth

grain

boundaries

polysilicon

Issues

Article Details

Authors: Abadli S | Mansour F

Publisher: Université Mentouri de Constantine

Journal: Sciences & technologie. B, Sciences de l’ingénieur Issue 26, pp.23-30

Document Type: Article

Publication Date: 12/2007

Document Language: English

Document ID (Org No.): 2001912028

pISSN: 2602-7801

Issues

Authors:

Abadli S | Mansour F

Publisher:

Université Mentouri de Constantine

Journal:

Sciences & technologie. B, Sciences de l’ingénieur Issue 26, pp.23-30

Document Type:

Article

Publication Date:

12/2007

Document Language:

English

Document ID (Org No.):

2001912028

pISSN:

2602-7801