Construction of Anisotype CdS/Si Heterojunction and Lineup Using I-V and C-V Measurements

Abdul-Majeed E. Al-Samarai

Article Details

Construction of Anisotype CdS/Si Heterojunction and Lineup Using I-V and C-V Measurements

Authors:

Abdul-Majeed E. Al-Samarai

Publisher:

University of Baghdad

Journal:

Iraqi Journal of Physics Vol.7 Issue 10, pp.30-34

Document Type:

Article

Publication Date:

1/2009

Document Language:

English

Document ID (Org No.):

2001368568

pISSN:

2664-5548

Keywords:

Construction of Anisotype CdS/Si

Abstract:

 Near-ideal p-CdS/n-Si heterojunction band edge lineup has been investigated for the first time with aid of I-V and C-V measurements. The heterojunction was manufactured by deposition of CdS films prepared by chemical spray pyrolysis technique (CSP) on monocrystalline n-type silicon. The experimental data of the conduction band offset Ec and valence band offset Ec were compared with theoretical values. The band offset Ec=530meV and Ev=770meV obtained at 300K. The energy band diagram of p-CdS/n-Si HJ was constructed. C-V measurements depict that the junction was an abrupt type and the built-in voltage was determined from C-2-V plot.

Article Details

Construction of Anisotype CdS/Si Heterojunction and Lineup Using I-V and C-V Measurements

Authors: Abdul-Majeed E. Al-Samarai

Publisher: University of Baghdad

Journal: Iraqi Journal of Physics Vol.7 Issue 10, pp.30-34

Document Type: Article

Publication Date: 1/2009

Document Language: English

Document ID (Org No.): 2001368568

pISSN: 2664-5548

Construction of Anisotype CdS/Si

Issues

Authors:

Abdul-Majeed E. Al-Samarai

Publisher:

University of Baghdad

Journal:

Iraqi Journal of Physics Vol.7 Issue 10, pp.30-34

Document Type:

Article

Publication Date:

1/2009

Document Language:

English

Document ID (Org No.):

2001368568

pISSN:

2664-5548