Modelling silicon etching using inverse methods

Eric Kincanon

doi:10.14419/ijamr.v11i1.31930

Article Details

Modelling silicon etching using inverse methods

Authors:

Eric Kincanon

Publisher:

Science Publishing Corporation

Journal:

International Journal of Applied Mathematical Research Vol.11 Issue 1, pp.8-10

Document Type:

Article

Publication Date:

2/2022

Document Language:

English

Document ID (Org No.):

2001386842

pISSN:

2227-4324

DOI:

10.14419/ijamr.v11i1.31930

Keywords:

Inverse Scattering

Abstract:

 This paper considers a real-world application of a recently presented alternative form of the Gelfand-Levitan equation. Here is considered the case of potential in the plasma above silicon during the etching process. It is shown that although standard methods have significant challenges, the alternative form of the Gelfand-Levitan equation gives a straightforward way to determine the reflection coefficient from an assumed potential.Â Â.

Article Details

Modelling silicon etching using inverse methods

Authors: Eric Kincanon

Publisher: Science Publishing Corporation

Journal: International Journal of Applied Mathematical Research Vol.11 Issue 1, pp.8-10

Document Type: Article

Publication Date: 2/2022

Document Language: English

Document ID (Org No.): 2001386842

pISSN: 2227-4324

DOI: 10.14419/ijamr.v11i1.31930

Inverse Scattering

Issues

Authors:

Eric Kincanon

Publisher:

Science Publishing Corporation

Journal:

International Journal of Applied Mathematical Research Vol.11 Issue 1, pp.8-10

Document Type:

Article

Publication Date:

2/2022

Document Language:

English

Document ID (Org No.):

2001386842

pISSN:

2227-4324

DOI:

10.14419/ijamr.v11i1.31930