Effect of Organic Interface on Microelectronic Parameters of Heterojunction Device

Ali Uğur

Article Details

Effect of Organic Interface on Microelectronic Parameters of Heterojunction Device

Authors:

Ali Uğur

Publisher:

Fırat University

Main Topics:

Yoğun Madde Karakterizasyon Tekniği Geliştirme

Journal:

Fırat Üniversitesi Fen Bilimleri Dergisi Vol.37 Issue 2, pp.45-53

Document Type:

Article

Publication Date:

9/2025

Document Language:

Turkish

Document ID (Org No.):

2001357967

pISSN:

1308-9064

Keywords:

Abstract:

 In this study, the AgFKn-Si heterojunction device was created using the Agn-Si diode and FK Phenol Red organic interface. With the help of current-voltage I-V measurements, important microelectronic parameters of reference and the heterojunction devices such as barrier height Фb, ideality factor n, series resistance Rs, and saturation current density J0 were calculated using thermionic emission TE theory. In addition, the frequency values of the produced devices between 500 kHz and 1750 kHz were regularly increased and the built-in potential Vbi, barrier height Φb, and donor concentration Nd were calculated from the microelectronic parameters obtained from the C-V measurement taken at different frequencies. As a result of the measurements, calculations, and comparisons obtained after the studies, it was reported that the AgFKn-Si heterojunction produced was applicable in microelectronic device technologies.

 In this study, the AgFKn-Si heterojunction device was created using the Agn-Si diode and FK Phenol Red organic interface. With the help of current-voltage I-V measurements, important microelectronic parameters of reference and the heterojunction devices such as barrier height Фb, ideality factor n, series resistance Rs, and saturation current density J0 were calculated using thermionic emission TE theory. In addition, the frequency values of the produced devices between 500 kHz and 1750 kHz were regularly increased and the built-in potential Vbi, barrier height Φb, and donor concentration Nd were calculated from the microelectronic parameters obtained from the C-V measurement taken at different frequencies. As a result of the measurements, calculations, and comparisons obtained after the studies, it was reported that the AgFKn-Si heterojunction produced was applicable in microelectronic device technologies.

 In this study, the AgFKn-Si heterojunction device was created using the Agn-Si diode and FK Phenol Red organic interface. With the help of current-voltage I-V measurements, important microelectronic parameters of reference and the heterojunction devices such as barrier height Фb, ideality factor n, series resistance Rs, and saturation current density J0 were calculated using thermionic emission TE theory. In addition, the frequency values of the produced devices between 500 kHz and 1750 kHz were regularly increased and the built-in potential Vbi, barrier height Φb, and donor concentration Nd were calculated from the microelectronic parameters obtained from the C-V measurement taken at different frequencies. As a result of the measurements, calculations, and comparisons obtained after the studies, it was reported that the AgFKn-Si heterojunction produced was applicable in microelectronic device technologies.

 Bu çalışmada, Agn-Si referans diyot ve FK Fenol Kırmızı organik ara yüzey kullanılarak AgFKn-Si hetero eklem aygıtı oluşturuldu. Akım-gerilim I-V ölçümleri yardımıyla referans ve heteroeklem aygıtların engel yüksekliği Фb, idealite faktörü n, seri direnç Rs ve doyma akım yoğunluğu J0 benzeri önemli mikroelektronik parametreleri termiyonik emisyon TE teorisi kullanılarak hesaplandı. Ayrıca üretilen aygıtların 500 kHz ile 1750 kHz arasındaki frekans değerleri düzenli olarak artırılarak farklı frekanslarda alınan C-V ölçümünden elde edilen mikroelektronik parametrelerden built-in potansiyeli Vbi, engel yüksekliği Φb, donör konsantrasyonu Nd hesaplandı. Yapılan çalışmalar sonrası elde edilen ölçümler, hesaplamalar ve kıyaslamalar sonucunda üretilmiş olan AgFKn-Si hetero ekleminin mikroelektronik aygıt teknolojilerinde uygulanabilir olduğu rapor edildi.

Article Details

Effect of Organic Interface on Microelectronic Parameters of Heterojunction Device

Authors:

Ali Uğur

Publisher:

Fırat University

Main Topics:

Yoğun Madde Karakterizasyon Tekniği Geliştirme

Journal:

Fırat Üniversitesi Fen Bilimleri Dergisi Vol.37 Issue 2, pp.45-53

Document Type:

Article

Publication Date:

9/2025

Document Language:

Turkish

Document ID (Org No.):

2001357967

pISSN:

1308-9064

Phenol red

organic interface

heterojunction

microelectronic deviceFenol kırmızı

organik arayüzey

hetero eklem

mikroelektronik aygıt

Issues

Article Details

Authors: Ali Uğur

Publisher: Fırat University

Main Topics: Yoğun Madde Karakterizasyon Tekniği Geliştirme

Journal: Fırat Üniversitesi Fen Bilimleri Dergisi Vol.37 Issue 2, pp.45-53

Document Type: Article

Publication Date: 9/2025

Document Language: Turkish

Document ID (Org No.): 2001357967

pISSN: 1308-9064

Issues

Authors:

Ali Uğur

Publisher:

Fırat University

Main Topics:

Yoğun Madde Karakterizasyon Tekniği Geliştirme

Journal:

Fırat Üniversitesi Fen Bilimleri Dergisi Vol.37 Issue 2, pp.45-53

Document Type:

Article

Publication Date:

9/2025

Document Language:

Turkish

Document ID (Org No.):

2001357967

pISSN:

1308-9064