Three-dimensional numerical simulation of crystal and crucible rotations during Czochralski growth of GexSi1-x single crystals

Serkan ABBASOĞLU

Article Details

Three-dimensional numerical simulation of crystal and crucible rotations during Czochralski growth of GexSi1-x single crystals

Authors:

Serkan ABBASOĞLU

Publisher:

TUBITAK

Journal:

Turkish Journal of Electrical Engineering and Computer Science 2012 Vol.20 Issue Sup.2, pp.1343-1358

Document Type:

Article

Publication Date:

11/2011

Document Language:

Turkish

Document ID (Org No.):

2000743698

Frequency:

Bimonthly

eISSN:

1303-6203

pISSN:

1300-0632

Abstract:

 

The influence of crystal and crucible rotations on the flow  field and the radial segregation of silicon are predicted during the  growth of GexSi1-x crystals by the Czochralski method under  microgravity conditions.  Time-dependent 3-dimensional numerical  simulations are carried out to present the influence of several  rotation rates on the radial segregation and flow fields during the  growth of GexSi1-x.  Thermal and solutal Marangoni convection are  also considered during this study.  Different crystal rotation rates  varying between 0 and 30 rpm and stationary or -2 rpm crucible  rotation rates are considered.  The results show that the crystal and  crucible rotation rates have significant influence on the flow field  and radial segregation.  It is clear that crystal and crucible  rotations with an optimum rotation rate lead to good mixing along the  growth interface and result in a crystal with a uniform concentration  distribution.

 

The influence of crystal and crucible rotations on the flow  field and the radial segregation of silicon are predicted during the  growth of GexSi1-x crystals by the Czochralski method under  microgravity conditions.  Time-dependent 3-dimensional numerical  simulations are carried out to present the influence of several  rotation rates on the radial segregation and flow fields during the  growth of GexSi1-x.  Thermal and solutal Marangoni convection are  also considered during this study.  Different crystal rotation rates  varying between 0 and 30 rpm and stationary or -2 rpm crucible  rotation rates are considered.  The results show that the crystal and  crucible rotation rates have significant influence on the flow field  and radial segregation.  It is clear that crystal and crucible  rotations with an optimum rotation rate lead to good mixing along the  growth interface and result in a crystal with a uniform concentration  distribution.

Article Details

Three-dimensional numerical simulation of crystal and crucible rotations during Czochralski growth of GexSi1-x single crystals

Authors: Serkan ABBASOĞLU

Publisher: TUBITAK

Journal: Turkish Journal of Electrical Engineering and Computer Science 2012 Vol.20 Issue Sup.2, pp.1343-1358

Document Type: Article

Publication Date: 11/2011

Document Language: Turkish

Document ID (Org No.): 2000743698

Frequency: Bimonthly

eISSN: 1303-6203

pISSN: 1300-0632

Issues

Authors:

Serkan ABBASOĞLU

Publisher:

TUBITAK

Journal:

Turkish Journal of Electrical Engineering and Computer Science 2012 Vol.20 Issue Sup.2, pp.1343-1358

Document Type:

Article

Publication Date:

11/2011

Document Language:

Turkish

Document ID (Org No.):

2000743698

Frequency:

Bimonthly

eISSN:

1303-6203

pISSN:

1300-0632