An RC-triggered ESD clamp for high-voltage BCD CMOS processes

Fatih KOÇER

Article Details

An RC-triggered ESD clamp for high-voltage BCD CMOS processes

Authors:

Fatih KOÇER

Publisher:

TUBITAK

Journal:

Turkish Journal of Electrical Engineering and Computer Science 2017 Vol.25 Issue 4, pp.3435-3442

Document Type:

Article

Publication Date:

7/2017

Document Language:

Turkish

Document ID (Org No.):

2000736286

Frequency:

Bimonthly

eISSN:

1303-6203

pISSN:

1300-0632

Abstract:

 

This paper presents a novel RC-triggered, field-effect   transistor (FET)-based power clamp that can be used in high-voltage   complementary metal oxide semiconductor (CMOS) processes. A simple two-stage   design provides a fast trigger while keeping the clamp transistor on for   much longer than the triggering duration without the need for an additional   digital latching circuit. As the presented technique does not require any   digital circuits, it is especially useful in bipolar-CMOS-DMOS (BCD)   processes, where the implementation of digital blocks is difficult due to   the limited gate-to-source voltage of the laterally diffused metal oxide   semiconductor (LDMOS) transistors. The proposed architecture is implemented   in a 0.25-μμ\mu m BCD process offered by TSMC. Simulation results show that   Class 3A-level electrostatic discharge (ESD) protection can be achieved with   an 8-mm-wide device while keeping all gate-to-source voltage values below   the recommended 5-V limit. As the circuit operation depends on the   well-modeled transient behavior of transistors, the proposed technique can   be extended to other ESD ratings and can also be migrated to other processes   without the need of extensive hardware verification.

Article Details

An RC-triggered ESD clamp for high-voltage BCD CMOS processes

Authors: Fatih KOÇER

Publisher: TUBITAK

Journal: Turkish Journal of Electrical Engineering and Computer Science 2017 Vol.25 Issue 4, pp.3435-3442

Document Type: Article

Publication Date: 7/2017

Document Language: Turkish

Document ID (Org No.): 2000736286

Frequency: Bimonthly

eISSN: 1303-6203

pISSN: 1300-0632

Issues

Authors:

Fatih KOÇER

Publisher:

TUBITAK

Journal:

Turkish Journal of Electrical Engineering and Computer Science 2017 Vol.25 Issue 4, pp.3435-3442

Document Type:

Article

Publication Date:

7/2017

Document Language:

Turkish

Document ID (Org No.):

2000736286

Frequency:

Bimonthly

eISSN:

1303-6203

pISSN:

1300-0632