Sub-nanosecond Pulse Generation from a Two-section Laser-thyristor: Theoretical Analysis

V Golovin; D Romanovich; O Soboleva; A Podoskin; P Gavrina; V Kapitonov; D Veselov; S Slipchenko; N Pikhtin

Article Details

Sub-nanosecond Pulse Generation from a Two-section Laser-thyristor: Theoretical Analysis

Authors:

V Golovin | D Romanovich | O Soboleva | A Podoskin | P Gavrina | V Kapitonov | D Veselov | S Slipchenko | N Pikhtin

Publisher:

KnE Social Sciences

Journal:

KnE Engineering Vol.3 Issue 6, pp.126-135

Document Type:

Article

Publication Date:

8/2018

Document Language:

English

Document ID (Org No.):

2001523528

pISSN:

2518-6841

Keywords:

Abstract:

 We have developed a theoretical model of a two-section laser-thyristor. It is shown that using a 4 µm weakly doped p-base can increase blocking voltage up to 50 V, which makes it possible to generate 2 ns 10 A current pulses. It is demonstrated that the proposed device utilizes passive Q switching to generate high-power short optical pulses that account for up to 80% of output power. By picking the optimal passive section length, we have achieved optical pulses of ∼30 ps full width at half maximum (FWHM) and ∼100 W peak power.

Article Details

Sub-nanosecond Pulse Generation from a Two-section Laser-thyristor: Theoretical Analysis

Authors:

V Golovin | D Romanovich | O Soboleva | A Podoskin | P Gavrina | V Kapitonov | D Veselov | S Slipchenko | N Pikhtin

Publisher:

KnE Social Sciences

Journal:

KnE Engineering Vol.3 Issue 6, pp.126-135

Document Type:

Article

Publication Date:

8/2018

Document Language:

English

Document ID (Org No.):

2001523528

pISSN:

2518-6841

pulsed laser

semiconductor N-p-N-i-P heterostructure

laser-thyristor

dynamic model of pulsed laser

Issues

Article Details

Sub-nanosecond Pulse Generation from a Two-section Laser-thyristor: Theoretical Analysis

Authors: V Golovin | D Romanovich | O Soboleva | A Podoskin | P Gavrina | V Kapitonov | D Veselov | S Slipchenko | N Pikhtin

Publisher: KnE Social Sciences

Journal: KnE Engineering Vol.3 Issue 6, pp.126-135

Document Type: Article

Publication Date: 8/2018

Document Language: English

Document ID (Org No.): 2001523528

pISSN: 2518-6841

pulsed laser

semiconductor N-p-N-i-P heterostructure

laser-thyristor

dynamic model of pulsed laser

Issues

Authors:

V Golovin | D Romanovich | O Soboleva | A Podoskin | P Gavrina | V Kapitonov | D Veselov | S Slipchenko | N Pikhtin

Publisher:

KnE Social Sciences

Journal:

KnE Engineering Vol.3 Issue 6, pp.126-135

Document Type:

Article

Publication Date:

8/2018

Document Language:

English

Document ID (Org No.):

2001523528

pISSN:

2518-6841